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In this research article, an operational amplifier (OPAMP) is designed using high-k gain FinFET structure in the context of 22 nm technology. Opamp based FinFET uses the same design principles for MOSFET-based op amplifier. The architecture based on Opamp is ideal for use as a component in ADC design since it has lower gain, higher voltage, and lower power consumption. The configuration of the transistor geometry allows a complete operational amplifier AMP to demonstrate better performance and power consumption. Use montage tools to capture events. The results show that the design operates at 100 GHz UGB and a charge lower than 10 V/μS, according to simulation testing. This power supply has a power consumption of 800 nW and is suitable for many low voltage and digital power supplies.

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Design of OPAMP Based on 22 nm FinFET Technology

  • 会议论文

  • 发表日期：

    2025年

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  • G. Vasudeva,
  • P. Y. Mallikarjun,
  • Mandar Jatkar,
  • Tripti R. Kulkarni,
  • Roopa R. Kulkarni,
  • Bharathi Gururaj,
  • M. P. Tejas

摘要

In this research article, an operational amplifier (OPAMP) is designed using high-k gain FinFET structure in the context of 22 nm technology. Opamp based FinFET uses the same design principles for MOSFET-based op amplifier. The architecture based on Opamp is ideal for use as a component in ADC design since it has lower gain, higher voltage, and lower power consumption. The configuration of the transistor geometry allows a complete operational amplifier AMP to demonstrate better performance and power consumption. Use montage tools to capture events. The results show that the design operates at 100 GHz UGB and a charge lower than 10 V/μS, according to simulation testing. This power supply has a power consumption of 800 nW and is suitable for many low voltage and digital power supplies.