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On-chip inductors play a vital role in RF circuits for wide choice of tuning circuits, high-yield performance circuits and filter circuits. This paper discusses about the design and analysis of low loss passive components using fractal geometry suitable for RF and THz frequency applications with low loss. Inductors are designed on silicon substrate in micro-scale using fractal structure. Proposed inductor offers low loss to enable high performance and resonate at THz frequency in a wide range of applications. Fractal geometry increases the conductor length with single iteration of one turn is designed in jaw pattern with defective ground structure. Proposed fractal inductor offers an intrinsic inductance value of 60pH, maximum inductance value is 2nH, maximum quality factor of 7.3 and resonant frequency of 396 GHz. Proposed On-chip inductor silicon area is 10 μm × 10 μm.

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Design and Simulation on Chip Fractal Inductor for Sub–THz Applications

  • 会议论文

  • 发表日期：

    2025年

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  • Nagesh Deevi,
  • Dileep Reddy Bolla,
  • Thottempudi Pardhu,
  • Ravuri Viswanatham,
  • MV. Subbarao

摘要

On-chip inductors play a vital role in RF circuits for wide choice of tuning circuits, high-yield performance circuits and filter circuits. This paper discusses about the design and analysis of low loss passive components using fractal geometry suitable for RF and THz frequency applications with low loss. Inductors are designed on silicon substrate in micro-scale using fractal structure. Proposed inductor offers low loss to enable high performance and resonate at THz frequency in a wide range of applications. Fractal geometry increases the conductor length with single iteration of one turn is designed in jaw pattern with defective ground structure. Proposed fractal inductor offers an intrinsic inductance value of 60pH, maximum inductance value is 2nH, maximum quality factor of 7.3 and resonant frequency of 396 GHz. Proposed On-chip inductor silicon area is 10 μm × 10 μm.