Repetitive Transient Overcurrent Reliability of Si IGBT/SiC MOSFET Hybrid Switch

The Si IGBT/SiC MOSFET hybrid switch has gain researchers’ increased interest because of its excellent tradeoff between cost and performance. Few studies have been investigated on its overcurrent reliability although it has severe overcurrent stress on its internal SiC MOSFET under transient overcurrent operation condition. In this paper, a transient overcurrent test method for the Si/SiC hybrid switch is proposed to study its reliability under repetitive transient overcurrent. The transient overcurrent reliability test platform is designed and built to achieve similar overcurrent stress of the internal SiC MOSFET to practical overcurrent operation conditions of the hybrid switch. Comparing of the static electrical and thermal parameters of the tested hybrid device, the obvious package reliability of the hybrid switch under repetitive overcurrent tests in the special gate control mode was demonstrated and analyzed.