Electromagnetic Compatibility Enhancement for Semiconductor Equipment via Coordinated Multi‑level Suppression a Simulation-Experiment Study

Semiconductor manufacturing tools co‑locate high‑energy actuators with ultra‑sensitive metrology, making electromagnetic interference (EMI) a principal threat to yield and uptime. This paper presents a submission‑ready, single‑column study that couples circuit‑level conducted‑EMI modeling with 3D field simulation and controlled experiments to realize a coordinated multi‑level suppression strategy on a wafer handling and test platform. Guided by fab‑grade targets (≤ 0.5–0.7 V/m local field and ≤ 5 mA ground noise), an explicit EMI budget is allocated across the source, path, and victim layers: tailored LC/common‑mode filtering, return‑aware shielding and grounding, and immunity‑shaping at the analog front‑end. The workflow separates common‑mode current paths from magnetic near‑field coupling and quantifies each mitigation layer’s contribution. Under worst‑case synchronized motion, measurements show broadband emission reductions of 10–30 dB, the 5 MHz conducted peak dropping from 65 to 34 dBµV, local field from 2.0 to 0.5 V/m, and elimination of intermittent sensor faults. The method offers a low‑intrusion, reproducible retrofit template for EMC‑by‑design in advanced semiconductor equipment.