The Influence of Sintering Process on the Properties of Semiconductor Glaze for Electric Ceramics
摘要
As the era continues to evolve and progress, the applications for electric porcelain products are expanding, and there is a growing demand for their performance. The development of electric porcelain glaze is increasingly moving towards refinement, high-end, and environmentally friendly directions. Despite the maturation of electric porcelain products, the development of electric porcelain semiconductor glaze products remains relatively low, necessitating improvements in their performance. This experiment employs ZnO/SnO2 semiconductor powder to create electric ceramic semiconductor glaze. By altering the sintering process parameters, such as temperature, heating rate, and holding time, the experiment investigates the performance variations of the glaze under different sintering conditions to ascertain the optimal sintering parameters. Research has indicated that the optimal sintering temperature for glazes with ZnO is 1300 °C, with a holding time of 60 min and a heating rate of 3 °C/min. For glazes containing SnO2, the optimal sintering temperature is 1250 °C, also with a holding time of 60 min and a heating rate of 3 °C/min.