A Novel dv/dt Extraction Method for SiC MOSFET Based on the Switching Transient Current Peak

SiC MOSFET has a serious of merits due to its material characteristics. However, higher switching frequency can introduce side effects due to more severe voltage/current change. In order to access the full frequency potential of SiC MOSFET, and evaluate the switching transient more accuracy, this article demonstrates a dv/dt extraction method from the turn-on current transient information for SiC MOSFET. The dv/dt has a linearity relationship with the square of overshoot based on the theoretical treatment and simulation analysis results. The parameters of the model of dv/dt and square of overshoot can be obtained through the experimental results, which can be used for the extraction of dv/dt. The extraction strategy in this paper has a satisfactory performance with costly and simplicity hardware structure, which can be used to improve the high frequency ability of SiC MOSFET.