Effect of Process Parameters on Etching of Silicon Wafers in RF Capacitively Coupled CF4/Ar Plasma

Based on the regulation mechanism of plasma characteristic parameters, this study conducted silicon wafer etching experiments to clarify the influence mechanisms of etching process parameters—chamber pressure, gas ratio, discharge power, and etching duration—on silicon-based material etching. The experimental results indicate: chamber pressure affects etching by changing fluorine radical concentration, with etching rate increasing as pressure rises; gas ratio influences etching by regulating physical sputtering and chemical reactions discharge power impacts etching through changes in fluorine radical concentration and argon ion bombardment sputtering; throughout the entire etching process, etching depth shows stepwise growth, and etching rate displays irregular oscillation characteristics.