The Influence of Temperature on Dynamic Threshold Voltage Drift of SiC MOSFET
摘要
With the widespread adoption of silicon carbide (SiC) power MOSFETs in power electronics, reliability concerns—particularly dynamic threshold voltage drift—have drawn increasing attention. This study examines the impact of temperature on such drift through experimental testing conducted across a range of conditions, including high and cryogenic temperatures. The results demonstrate that the threshold voltage drift of SiC MOSFETs from Infineon, Cree, and Rohm decreases as temperature increases. In contrast, devices from ST exhibit greater drift at both high and low temperatures compared to room temperature. These findings offer valuable guidance for the application of SiC MOSFETs across varying temperature conditions.