Analysis on the Influence of Stray Inductance on IGBT Bridge Arm Short Circuit

The Insulated Gate Bipolar Transistor (IGBT), a critical component of inverter bridge arms, faces significant challenges in reliability assessment and the study of short-circuit fault mechanisms. This paper addresses the issue of inverter bridge arm short-circuit faults by systematically developing a short-circuit experimental testing system based on a dual-pulse test platform. Through comparative experiments under various operating conditions, the paper delves into how line stray inductance parameters influence the short-circuit transient process. By integrating numerical simulations with experimental validation, the paper quantitatively reveals the effects of stray inductance on key failure parameters, such as the rise rate of short-circuit current (di/dt) and the collector-emitter overvoltage (ΔV). Furthermore, it proposes an optimized bridge arm short-circuit test scheme to accurately simulate real-world conditions.