Research on Hard-Drive Circuit Model of Asymmetric IGCT Suitable for Different Temperatures

This paper proposed a circuit model of the 4.5 kV/6.5 kA asymmetric IGCT, namely the M-2T-3R-C model, to characterize its switching characteristics under varying temperature conditions. First, the device structure model was established using Sentaurus-TCAD software for numerical simulation, enabling the extraction of model parameters for different temperatures. Additionally, an equivalent circuit of the IGCT’s M-2T-3R-C hard drive circuit was constructed in Cadence-Pspice for switching characteristic simulations. The simulation results were validated through comparison with measured results, demonstrating consistency between numerical simulations, circuit model simulations, and experimental data. The results indicate that the relative errors of parameters such as GCT’s commutation time, turn-off time, anode voltage peak, and secondary peak are all within 10%. This demonstrates that the M-2T-3R-C hard drive circuit model for IGCT can more accurately reflect the switching characteristics and internal commutation processes of asymmetric IGCTs at different temperatures.