Research on the High Stability Loop Design Method for GaN-Based Photovoltaic Inverters Considering the Dynamic Conductance Resistance of GaN Devices
摘要
GaN based photovoltaic inverters can operate at higher switching frequencies, with higher efficiency and power density. However, the high-speed switching of GaN devices can easily cause switch waveform oscillations or even continuous oscillations, which affects stability. To solve this problem, with the consideration of the GaN devices dynamic conductance resistance characteristics, an accurate model for stability analysis of GaN based circuit switching-on process is constructed. Based on the model, the influence of dynamic conductance resistance on the oscillation stability is analyzed, and high stability loop design constraints for GaN-based photovoltaic inverters considering the dynamic conductance resistance is proposed. This research has been verified by simulation and experiments results.