Microstrip Line Structure Characterization Based on Quantum Wide-Field Microscopy

Non-invasive imaging of surface microwave fields under microstrip line conditions can advance the development of microwave circuit troubleshooting and functional inspection techniques. In this study, a quantum wide-field imaging technique based on a diamond nitrogen vacancy (NV) centers was used to characterize the surface radiated microwave fields of microstrip line structures with different input powers at a resolution of 1.63 μm/pixel in a field of view of 1.5 × 1.5 mm2, with a detection sensitivity of 0.75 \( \textrm{nT}/\sqrt{\textrm{Hz}} \) . The imaging technique can be applied to the characterisation of surface microwave fields of microwave circuits and the detection of subsurface metallic structures