Establishing an accurate electromagnetic transient model for the commutation process of multi-port hybrid high-voltage DC circuit breakers is the theoretical basis for achieving topology design and prototype development, and extracting accurate stray parameters of semiconductor power devices is one of the primary tasks of electromagnetic transient modeling. At present, impedance analyzers are commonly used for extracting stray parameters. During testing, one terminal may be in a floating state, resulting in non-unique stray parameters being extracted. This article proposes a new technique using a dual port vector network analyzer to measure the S parameters of semiconductor power devices, converting the S parameters into impedance parameters, and extracting stray capacitance and stray inductance using the impedance characteristics at low and high frequencies, respectively. The effectiveness of this technique was verified through experiments on IGBT device and IGBT module.