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Electroluminescence Imaging Comparison for Crystalline Silicon Photovoltaic Modules

  • Alberto Redondo-Plaza,
  • Amy Zulema Velasco-Bonilla,
  • Vanessa de Almeida Guimarães,
  • Ghada Amami,
  • Ángel L. Zorita-Lamadrid,
  • Víctor Alonso-Gómez,
  • Luis Hernández Callejo

摘要

Electroluminescence imaging is highly useful for the inspection of field-deployed photovoltaic modules. The low intensity of the electroluminescence signal compared to sunlight is one of the main challenges for daytime acquisition. In this context, differences between various solar cell technologies in terms of electroluminescence signal intensity are a key factor that may limit the feasibility of daylight measurements. The present article studies and quantifies electroluminescence signal intensity in different crystalline silicon technologies, including conventional multicrystalline and monocrystalline photovoltaic devices, as well as novel technologies such as bifacial, PERC, and TOPCon solar cells. The main findings show that electroluminescence signal intensity can be up to two orders of magnitude higher when comparing different technologies.