Design and Comparison of a Single-Stage Amplifier Using Radiation-Hardened Annular MOSFETs Versus Conventional MOSFETs

This article presents the design and comparative analysis of a single-stage amplifier using radiation-hardened annular MOSFETs (RHAMs) versus conventional MOSFETs (CMOS) for space and high-radiation applications. With an increasing demand for reliable performance in extreme environments, radiation-hardened components are crucial to ensuring the stability and longevity of electronic circuits exposed to radiation. The study explores the electrical characteristics, performance metrics and radiation resistance of RHAMs and CMOS in the context of single-stage amplifier circuits. Key factors such as gain, bandwidth, and power consumption are compared for both types of transistors. Simulation results reveal that RHAMs offer greater radiation resistance, but at the cost of higher power consumption and lower gain compared to conventional MOSFETs. The advantages and disadvantages of these two types of transistors are analyzed, providing a better understanding of their suitability for space and other radiation-sensitive applications. This work provides a comprehensive overview of the design considerations and performance implications when selecting transistors for robust, high-reliability amplifier circuits.