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This chapter presents the design and performance evaluation of a novel Silicon Carbide (4H-SiC) based Dielectric-Modulated Triple Metal-Gate-All-Around (TMGAA) MOSFET using the ATLAS 3D device simulator. A gate stack incorporating (high-k) dielectric material, Hafnium Oxide, HfO₂, and gate dielectric Aluminum Oxide, Al2O3, has been utilized. To ensure a comprehensive and fair analysis, the performance of the TMGAA MOSFET is compared with that of the Double-Metal-Gate-All-Around (DMGAA) MOSFET. Key analog performance metrics such as drain current (Ids), transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), subthreshold slope (SS), unilateral power gain (UPG), and Maximum Transducer Power Gain (MTPG) are evaluated. Using the parabolic potential approximation, the two-dimensional Poisson’s equation is solved to derive the above key parameters, such as surface potential, electric field, etc., which are subsequently utilized to evaluate the analog performance of the device. In addition, electrical parameters such as majority and minority carrier concentrations, carrier velocity, conduction band, and valence band energy have been calculated to provide a deeper understanding of the device behavior. The simulation results for the TMGAA MOSFET show close agreement with the proposed analytical model, validating the accuracy of the theoretical approach.

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Silicon Carbide-Based Triple Metal GAA MOSFETs: Analytical Insights into Electrical and Analog Performance

  • 章节

  • 发表日期：

    2026年

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  • Neeti Mishra,
  • Neha Mishra,
  • Neeraj,
  • Shalu Garg

摘要

This chapter presents the design and performance evaluation of a novel Silicon Carbide (4H-SiC) based Dielectric-Modulated Triple Metal-Gate-All-Around (TMGAA) MOSFET using the ATLAS 3D device simulator. A gate stack incorporating (high-k) dielectric material, Hafnium Oxide, HfO₂, and gate dielectric Aluminum Oxide, Al2O3, has been utilized. To ensure a comprehensive and fair analysis, the performance of the TMGAA MOSFET is compared with that of the Double-Metal-Gate-All-Around (DMGAA) MOSFET. Key analog performance metrics such as drain current (Ids), transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), subthreshold slope (SS), unilateral power gain (UPG), and Maximum Transducer Power Gain (MTPG) are evaluated. Using the parabolic potential approximation, the two-dimensional Poisson’s equation is solved to derive the above key parameters, such as surface potential, electric field, etc., which are subsequently utilized to evaluate the analog performance of the device. In addition, electrical parameters such as majority and minority carrier concentrations, carrier velocity, conduction band, and valence band energy have been calculated to provide a deeper understanding of the device behavior. The simulation results for the TMGAA MOSFET show close agreement with the proposed analytical model, validating the accuracy of the theoretical approach.