As semiconductor technologies advance toward smaller nodes into the nanometer regime, conventional CMOS technologies face critical limitations in controlling short-channel effects, leakage currents, and power consumption. To address these challenges, fin field-effect transistor FinFET technology—particularly trigate FinFET architectures—has emerged as a robust alternative due to its improved gate control and enhanced electrostatic integrity. This chapter explores the electrical and analog performance of a 10 nm trigate FinFET structure (single-fin and dual-fin) simulated using the Sentaurus TCAD platform. A surface potential-based drain current model is employed, wherein the three-dimensional Poisson’s equation is self-consistently solved across the multiple gates of the device to capture the influence of gate voltages on performance metrics. High-k dielectric material (HfO2) with a high permittivity value is integrated into the gate stack and spacer to analyze its impact on key parameters such as drain current characteristics, transconductance, subthreshold behavior, and electric field distribution. The design demonstrates a substantial enhancement in performance by achieving improvement in ON current and an increase in the effective electric field compared to conventional FinFET architectures. Analog metrics, such as transconductance, also show significant improvement, indicating potential for high-speed and low-power analog/RF applications. The simulation results validate the design’s efficacy and provide deep insight into the scaling behavior of trigate FinFETs at the 7 nm technology node, offering a foundation for future nanoscale transistor optimization.