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In order to reduce radiation effects on temperature monitoring sensors and extend their lifetime, it is necessary to fortify the sensor units, signal processing integrated circuits, and chips to ensure high reliability of the monitoring system during the nuclear power plant’s major overhaul cycle. This paper presents a radiation-hardened magnetoresistive random access memory (MRAM) data storage chip designed based on differences in electron spin direction. We utilized innovative radiation-resistant nano-packaging materials to enhance the circuit’s radiation tolerance, developed a radiation-resistant temperature sensor, and conducted equivalent radiation testing. Test results indicate that the designed radiation-hardened temperature sensor performs well, maintaining stable and normal operation under a total radiation dose of 545 Gy.

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Design and Testing of Radiation-Hardened Temperature Sensors

  • 会议论文

  • 发表日期：

    2026年

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  • Ying Hong,
  • Wang Qiang,
  • Hui Tianyu,
  • Zhang Tao,
  • Liu Tao,
  • Wang Binfeng,
  • Tang Tang,
  • Wang Yingjie,
  • Lin Nan

摘要

In order to reduce radiation effects on temperature monitoring sensors and extend their lifetime, it is necessary to fortify the sensor units, signal processing integrated circuits, and chips to ensure high reliability of the monitoring system during the nuclear power plant’s major overhaul cycle. This paper presents a radiation-hardened magnetoresistive random access memory (MRAM) data storage chip designed based on differences in electron spin direction. We utilized innovative radiation-resistant nano-packaging materials to enhance the circuit’s radiation tolerance, developed a radiation-resistant temperature sensor, and conducted equivalent radiation testing. Test results indicate that the designed radiation-hardened temperature sensor performs well, maintaining stable and normal operation under a total radiation dose of 545 Gy.