Fabrication and Characterization of p- Cu2O:B/n-TiO2 Heterojunction UV Detector
摘要
Rutile TiO2 nanorods were grown on FTO-coated glass substrate via the hydrothermal method. Photoluminescence study of the TiO2 revealed the presence of traps and defect states in the nanorods. A p-n heterojunction diode was fabricated by depositing Cu2O: B layer on the TiO2 through sputtering. The fabricated diode showed rectification behaviour with a rectification ratio of 44 at 2.5 V. The diode shows deviation from the ideal character, and detailed studies suggest that additional charge transport mechanisms come into play because of the traps and surface states present in the interface. A double logarithmic plot revealed three distinct regions which exhibit power law behaviour. The diode shows significant photo response on UV illumination with an increased rectification ratio of 96 at 2.5 V. Fabricated heterojunction can be developed for sensor, UV detector and photocatalytic applications.