Highly promising devices are the Tunnel Field Effect Transistors (TFETs), which have a subthreshold swing of less than 60 mV/decade. Multi-gate devices are introduced in order to mitigate the short channel impact. This research investigates the efficiency of Double Metal Dual Gate Tunnel FET (DMDG-TFET) by altering the gate metals’ work functions and analyzing the impact on the electric field, surface potential, transfer characteristics, and threshold voltage. Decomposing the 2D Poisson Equations into two 1-D equations is the aim of the analytical study. With appropriate boundary conditions, the 2D Poisson equation is solved using the finite differentiation method (FDM). The proposed analytical model was validated by a simulation study of the previously reported DMDG-TFET properties. By changing the gate bias and demonstrating conformance with the results of the TCAD simulation, the effects of the surface potential and electric field are investigated. The outcomes of the analysis and the TCAD simulation are identical. Tunneling rate and tunneling width reduction have enhanced our transfer characteristics, and we have concluded that the ON current of the DMDG-TFET is higher than that of the SMG TFET.