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The work presented in this report has investigated the single-event-effect (SEE) due to heavy-ions (HI), which produces a current pulse in Tunnel field-effect-transistors TFETs. Because TFET shows promise as a low-power electronics option, it is used in this work. The study is of interest to those intending to use TFETs for space electronics. The impact of heavy-ion is analyzed for heavy-ion striking in body region. The parameters observed to analyze the impact are HI generation rate, HI charge density, surface potential, transient drain current, and the maximum drain current for different LETs. The maximum drain current observed in this study is compared with the previously published data. The approach was considered same to the previous works but the observed impact of heavy-ion on this device is higher than the other type of field effect transistors (FETs).

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Heavy-Ion Impact Analysis of Nanoscale Double-Gate Tunnel-FET

  • 会议论文

  • 发表日期：

    2026年

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  • Ashish Maurya,
  • Sagar,
  • Vedvrat

摘要

The work presented in this report has investigated the single-event-effect (SEE) due to heavy-ions (HI), which produces a current pulse in Tunnel field-effect-transistors TFETs. Because TFET shows promise as a low-power electronics option, it is used in this work. The study is of interest to those intending to use TFETs for space electronics. The impact of heavy-ion is analyzed for heavy-ion striking in body region. The parameters observed to analyze the impact are HI generation rate, HI charge density, surface potential, transient drain current, and the maximum drain current for different LETs. The maximum drain current observed in this study is compared with the previously published data. The approach was considered same to the previous works but the observed impact of heavy-ion on this device is higher than the other type of field effect transistors (FETs).