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ZnO is a typical representative of third-generation semiconductors with excellent optical properties. Its wide direct bandgap of 3.37 eV and high exciton binding energy of up to 60 meV make it an important candidate material for constructing room-temperature ultraviolet laser devices. In this chapter, I will systematically review the optoelectronic properties and characterization methods of ZnO micro/nanostructures from aspects including their preparation and characterization, luminescent properties, stimulated emission, mode regulation, and electroluminescence.

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Construction and Characterization of ZnO Micro/Nanolasers

  • 章节

  • 发表日期：

    2025年

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  • Junfeng Lu,
  • Jun Dai,
  • Wei Liu,
  • Xiaoxuan Wang,
  • Feifei Qin,
  • Ru Wang,
  • Zengliang Shi,
  • Gangyi Zhu,
  • Chunxiang Xu

摘要

ZnO is a typical representative of third-generation semiconductors with excellent optical properties. Its wide direct bandgap of 3.37 eV and high exciton binding energy of up to 60 meV make it an important candidate material for constructing room-temperature ultraviolet laser devices. In this chapter, I will systematically review the optoelectronic properties and characterization methods of ZnO micro/nanostructures from aspects including their preparation and characterization, luminescent properties, stimulated emission, mode regulation, and electroluminescence.