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This chapter is devoted to the MOCVD growth, fabrication, and characterization of gallium nitride (GaN)-based laser diodes (LDs). It is unraveled that the growth and annealing of low-temperature AlN buffer layer has a significant impcat on the subsequent growth of high-quality GaN epilayer. Then, p-type doping, high-quality InGaN/GaN multiple quantum wells and detailed fabrication procedure of GaN-based laser diodes are described. In addition, characterization of optoelectronic properties of grown epilayers and device structures is discussed in the chapter.

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Wide Bandgap Semiconductor Laser Diodes: Technology and Characterization

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  • 发表日期：

    2025年

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  • Degang Zhao

摘要

This chapter is devoted to the MOCVD growth, fabrication, and characterization of gallium nitride (GaN)-based laser diodes (LDs). It is unraveled that the growth and annealing of low-temperature AlN buffer layer has a significant impcat on the subsequent growth of high-quality GaN epilayer. Then, p-type doping, high-quality InGaN/GaN multiple quantum wells and detailed fabrication procedure of GaN-based laser diodes are described. In addition, characterization of optoelectronic properties of grown epilayers and device structures is discussed in the chapter.