High-Aspect-Ratio Lithography for Microsystems
摘要
This chapter focuses on high-aspect-ratio lithography, discussing the requirements for high-aspect-ratio patterning and the properties and applications of SU-8 and related resists. It highlights the role of HSQ in high-resolution, high-aspect-ratio structures and addresses the challenges in deep lithography, such as resist swelling, adhesion loss, and cracking. Applications in MEMS and other microsystems are also presented.