Improved Impact Ionization Modelling for Thin Non Irradiated LGADs
摘要
The present and future detector systems in High Energy Physics (HEP) require fast timing, improved spatial measurements, and good signal-to-noise ratio (SNR) prompting the development of thin Low Gain Avalanche Detectors (LGADs) as an attractive alternative for replacing traditional silicon sensors for 4D tracking purposes. Technology Computer-Aided Design (TCAD) simulations help to predict and optimize the LGAD performance. Recent studies using common TCAD tools have shown discrepancies between simulated and observed charge collection in LGADs. This emphasizes the need to refine impact ionization model parameters responsible for internal charge multiplication. The present simulation studies focus on the optimization of these parameters for thin non-irradiated LGADs using Silvaco TCAD. Enhanced ionization model for LGADs represent an initial step toward optimizing the design of these sensors under irradiation that address their limitations.