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MALTA2, the second generation of the MALTA family Depleted Monolithic Active Pixel Sensor, is fully fabricated using Tower’s 180 nm CMOS Imaging Sensor process. Extensive radiation hardness studies have been conducted using mixed hadron beams at CERN SPS to demonstrate their suitability for future High-Energy Physics (HEP) experiments. In this note, the results of the radiation hardness study of the MALTA2 sensor from the 2023 CERN SPS test beam campaign will be presented. Sensors fabricated on Czochralski substrates and high-doping of the n \(^{-}\) layer, irradiated to 3 \(\times \) 10 \(^{15}\) 1-MeV n \(_\text {eq}\) /cm \(^{2}\) , maximum efficiency of 90 \(\%\)  was achieved and the efficiency is further improved to 99 \(\%\)  by increasing the doping concentration in n \(^{-}\) layer.

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Radiation Hardness Study of MALTA2 Sensor

  • 会议论文

  • 发表日期：

    2025年

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  • Phil Allport,
  • Ignacio Asensi Tortajada,
  • Prafulla Behera,
  • Dumitru Vlad Berlea,
  • Daniela Bortoletto,
  • Craig Buttar,
  • Valerio Dao,
  • Ganapati Dash,
  • Lucian Fasselt,
  • Leyre Flores Sanz de Acedo,
  • Martin Gaži,
  • Laura Gonella,
  • Vicente González,
  • Giuliano Gustavino,
  • Sebastian Haberl,
  • Tomohiro Inada,
  • Pranati Jana,
  • Long Li,
  • Heinz Pernegger,
  • Petra Riedler,
  • Walter Snoeys,
  • Carlos Solans Sánchez,
  • Milou van Rijnbach,
  • Marcos Vázquez Núñez,
  • Anusree Vijay,
  • Julian Weick,
  • Steven Worm

摘要

MALTA2, the second generation of the MALTA family Depleted Monolithic Active Pixel Sensor, is fully fabricated using Tower’s 180 nm CMOS Imaging Sensor process. Extensive radiation hardness studies have been conducted using mixed hadron beams at CERN SPS to demonstrate their suitability for future High-Energy Physics (HEP) experiments. In this note, the results of the radiation hardness study of the MALTA2 sensor from the 2023 CERN SPS test beam campaign will be presented. Sensors fabricated on Czochralski substrates and high-doping of the n \(^{-}\) layer, irradiated to 3 \(\times \) 10 \(^{15}\) 1-MeV n \(_\text {eq}\) /cm \(^{2}\) , maximum efficiency of 90 \(\%\)  was achieved and the efficiency is further improved to 99 \(\%\)  by increasing the doping concentration in n \(^{-}\) layer.