Investigation of the Quenching Factor for Silicon and Germanium Using Molecular Dynamics Simulations
摘要
Quenching Factor is a crucial parameter for accurately analyzing nuclear recoil data in Dark Matter searches, as well as in neutron and coherent neutrino scattering experiments. In this study, we investigate the Nuclear and Electronic stopping powers in self-irradiated Silicon and Germanium matrices to understand the energy loss behavior of Si and Ge projectiles respectively. Using the LAMMPS molecular dynamics package with a (3 \(\times \) 3 \(\times \) 3 Angstrom) simulation cell, we calculated stopping powers for silicon and germanium targets at kinetic energies ranging from 10 eV to 10 keV. Our calculated stopping powers for both Nuclear and Electron interactions in Silicon and Germanium were compared with available experimental measurements to validate our results.