Exploring Low-Energy Background in HPGe Detector via Simulations: A Methodological Approach
摘要
We have developed a background model for a High-Purity Germanium (HPGe) detector using Monte Carlo simulations, focusing on accurately representing low-energy interactions within the 0 to 100 keV range. Initial simulations revealed discrepancies between experimental and simulated spectra, with peaks at 63 keV, 77 keV, and 87 keV appearing in simulations but absent in experimental data. To address this, we optimized the capping thickness of the HPGe crystal. By adjusting the capping thickness to 4 mm, the simulated 63 keV peak was successfully suppressed, improving agreement with the experimental spectrum.