Gallium oxide shows great potential for advancing optoelectronic device technology. It is emerging as a key component in the field of wide-bandgap semiconductors, suitable for various applications.This study successfully grew undoped and doped β-Ga2O3 thin films using the sol-gel method. To enhance the quality of the doped beta-gallium oxide thin films, substrates of quartz and sapphire (Al2O3) were utilized, and their effects were analyzed. X-ray diffraction was used to characterize the structure of the samples. While the elemental compositions of the films were investigated by the Energy Dispersive X-ray spectroscopy. Optical transmittance values were measured with a UV-visible spectrophotometer, and thickness measurements were obtained using spectroscopic ellipsometry. Scanning electron microscopy (SEM) images revealed the morphology of the samples.

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The Growth of Doped β_ \({\mathbf{G}\mathbf{a}}_{2}{\mathbf{O}}_{3}\) Thin Films on Quartz and \({\mathbf{A}\mathbf{l}}_{2}{\mathbf{O}}_{3}\) Substrates by Using Sol Gel Method

  • Fatma Amraoui,
  • Noureddine Sengouga,
  • Lobna Messeddek

摘要

Gallium oxide shows great potential for advancing optoelectronic device technology. It is emerging as a key component in the field of wide-bandgap semiconductors, suitable for various applications.This study successfully grew undoped and doped β-Ga2O3 thin films using the sol-gel method. To enhance the quality of the doped beta-gallium oxide thin films, substrates of quartz and sapphire (Al2O3) were utilized, and their effects were analyzed. X-ray diffraction was used to characterize the structure of the samples. While the elemental compositions of the films were investigated by the Energy Dispersive X-ray spectroscopy. Optical transmittance values were measured with a UV-visible spectrophotometer, and thickness measurements were obtained using spectroscopic ellipsometry. Scanning electron microscopy (SEM) images revealed the morphology of the samples.