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This paper presents a method for determining the minimum gate length upto which a double gate junctionless field effect transistor can be scaled down. A relation between the scale length and minimum gate length is obtained. The relationship is obtained from drain current expression considering the maximum tolerable leakage current. Minimum gate length for different gate oxide and channel materials has been compared at the different electric fields. The comparison shows that a double gate junctionless field effect transistor with Si as channel material and HfO2 can be scaled down to a shorter channel length 1.2467nm and 1.8339nm at 0.1GV/m and 0.05GV/m respectively.

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A Method for Determination of Minimum Possible Gate Length of A Double Gate Junctionless Field Effect Transistor

  • 会议论文

  • 发表日期：

    2026年

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  • Kaushik Chandra Deva Sarma,
  • Santanu Sharma

摘要

This paper presents a method for determining the minimum gate length upto which a double gate junctionless field effect transistor can be scaled down. A relation between the scale length and minimum gate length is obtained. The relationship is obtained from drain current expression considering the maximum tolerable leakage current. Minimum gate length for different gate oxide and channel materials has been compared at the different electric fields. The comparison shows that a double gate junctionless field effect transistor with Si as channel material and HfO2 can be scaled down to a shorter channel length 1.2467nm and 1.8339nm at 0.1GV/m and 0.05GV/m respectively.