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This paper analyzes a Negative Capacitance-based Gate All Around Tunnel Field Effect Transistor (NC-GAA-TFET) and its comparison with Gate All Around Tunnel Field Effect Transistor (GAA-TFET) for analog RF applications. The findings show that this proposed device features lower DIBL, improved transconductance, and a higher cut-off frequency compared to GAA-TFET. The integration of negative capacitance with GAA-TFET demonstrates improved performance in addressing Short channel effects, offering a higher \(I_{\text {ON}}/I_{\text {OFF}}\) ratio and reduced subthreshold swing compared to GAA-TFET. Additionally, the paper includes second- and third-order derivatives of transconductance, voltage intercept points—2 and 3, and a comprehensive analysis of linearity distortion in both the devices.

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Performance Analysis of Negative Capacitance-Based Gate All Around Tunnel Field Effect Transistor

  • 会议论文

  • 发表日期：

    2025年

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  • Shubham Verma,
  • Vimal Kumar Singh Yadav,
  • Sanjeev Rai

摘要

This paper analyzes a Negative Capacitance-based Gate All Around Tunnel Field Effect Transistor (NC-GAA-TFET) and its comparison with Gate All Around Tunnel Field Effect Transistor (GAA-TFET) for analog RF applications. The findings show that this proposed device features lower DIBL, improved transconductance, and a higher cut-off frequency compared to GAA-TFET. The integration of negative capacitance with GAA-TFET demonstrates improved performance in addressing Short channel effects, offering a higher \(I_{\text {ON}}/I_{\text {OFF}}\) ratio and reduced subthreshold swing compared to GAA-TFET. Additionally, the paper includes second- and third-order derivatives of transconductance, voltage intercept points—2 and 3, and a comprehensive analysis of linearity distortion in both the devices.