The demand for next-generation memory devices with higher density and faster operational speeds is growing rapidly, driving the need for alternatives to conventional memory technologies. Tin (Sn) is considered a viable substitute for lead (Pb) in ReRAM devices; however, the oxidation of Sn to Sn4+ poses performance challenges like those faced with lead-free perovskites. In this study, we developed ReRAM devices based on formamidinium tin iodide (FASnI3) and examined their current–voltage (I–V) characteristics to demonstrate bipolar resistive switching suitable for memory applications. The electrical performance of the devices was assessed using a Keithley 4200A SCS parametric analyzer with a customized probe station. The results indicate that the devices exhibit reversible resistive switching dynamics across multiple cycles, with low set/reset voltages of −2.5/+2.5 V, a very good switching window (30), and excellent endurance over 10 K cycles.