Transimpedance-Mode DTMOS MOSFET-C Band-Pass Filter with Wide Center-Frequency Tunability
摘要
This paper proposed MOS-C tunable band-pass filter designs based on Dynamic Threshold MOSFET (DTMOS) tuning, aimed at achieving high frequency agility with low power consumption. The proposed MOSFET-C filter employs transimpedance-based architectures and achieve wide center-frequency tunability using only few MOSFETs, thereby minimizing circuit complexity and power dissipation. The design operates at a low supply voltage of 1.5 V and are implemented using 180 nm CMOS technology. Simulation results confirm their validating and demonstrating center-frequency tuning ranges of 868.87 kHz to 12.84 MHz for proposed design. The robustness of the filters is further validated through process, voltage, and temperature (PVT) as well as Monte Carlo analyses, ensuring stable performance under practical variations. Additionally, the filters exhibit low total harmonic distortion (THD), making them well suited for modern signal-processing applications such as RF front-end circuits, software-defined radio (SDR), and multi-standard transceivers.