Superjunction MOSFETs: A Review on Balancing Efficiency and Sustainability in Power Electronics

This paper provides an overview of the progression of materials in MOSFET technologies, with a focus on their sustainability, and aims to identify the most suitable option for future eco-efficient and high-performance applications. Silicon was the first material to be used on a MOSFET due to its abundant availability and relatively low cost. As silicon progressed, the use of wide-bandgap materials like gallium nitride and silicon carbide paved the way for further high-efficiency high-voltage operation, but were again limited due to the fabrication complexity and their higher CO2 footprint. While germanium had advantages due to its excellent carrier mobility, it remained scarce and unsustainable because of shorter supply-chain options. More recently, superjunction-silicon MOSFETs were developed as a promising alternative in the form of lower on-resistance and higher energy efficiency, also a negligible CO2 footprint at comparatively lower production costs, making them a leading candidate for the next phase in performance for green materials for power electronics