A Novel 4H-SiC IGBT Integrated Emitter Embedded Gate PMOS with Low EMI Noise

A 15-kV-class 4H-SiC insulated-gate bipolar transistor (IGBT) with integrated emitter embedded gate PMOS structure (EGPMOS) is proposed and simulated in this work. By introducing the EGPMOS structure, the IGBT forms a hole barrier in the conduction state, and constructs a hole extraction path during the turn-on and turn-off transient, respectively. Compared with GS IGBT, the VON of EGPMOS IGBT is reduced by 54.95% under the same turn-off loss (Eoff). The EG structure can greatly increase the Cge without changing the Cgc, so the Cgc/Cge is reduced, and the EGPMOSIGBT can obtain better opening performance. Compared with the traditional pMOS IGBT, the Capacitance-Voltage characteristics showed that the Miller capacitance (Cgc) of EGPMOS IGBT remained almost unchanged, while the Cge increased by 75.64%. Meanwhile, effectively reduced Cgc/Cge has suppressed the diminishes reverse displacement current (IG-dis).Compared with PMOS IGBT,the peak IG-dis of EGPMOS IGBT is reduced by 50%, suppressing the gate self-charging effect and obtaining less EMI noise and stronger gate control ability. Simulation results indicate that, in contrast to PMOS IGBT, the EGPMOS IGBT provides better controll ability in maximum turning-on current (Imax) and turning-on dIC/dt. And maximum reverse recovery dVKA/dt is reduced by 32.73% while the turn-on loss (Eon) remain unchanged.