Thin films of ZnO, pure and doped with tellurium (up to 8 mol%), prepared by spray pyrolysis technique are investigated to elucidate the effect of tellurium concentration on the structure, morphology, optical and electrical properties of the films. The film thickness ranges between 1200 nm and 2500 nm. The X-ray diffraction results show a polycrystalline structure and hexagonal phase of the ZnO films with the average crystallite size increasing from 50 nm to 120 nm with increasing tellurium content. The surface of the films consists of densely spaced nanocrystalline grains and larger cluster formations, the number of clusters increases as the tellurium concentration is increased to 8 mol%. The estimated root mean square (RMS) roughness values for the undoped ZnO thin films and doped with 4 mol%, 6 mol% and 8 mol% Te are 6.12, 15.32, 18.68 and 29.25 nm, respectively. The UV-Vis spectroscopy results reveal that the increase in Te concentration contributes to the decrease in film transmittance. The optical energy band gap increases with the Te doping level. The electrical resistance of the films decreases by adding the dopant and decreases further with the increase of the dopant level.