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CMOS (Complementary Metal-Oxide-Semiconductor) technology is at the forefront of sensor integration, enabling the development of a diverse array of sensors on a single chip. These sensors include capacitive [1–5], impedimetric [6] optical [7], nuclear magnetic resonance (NMR) [8], magnetic hall effect [9], thermal [10], and mechanical [11] types, each designed to detect specific physical changes. CMOS technology facilitates the miniaturization and integration of these sensors, along with their interface circuits, onto a compact and cost-effective platform. This integration allows for the detection of minute electrical changes, which are then processed through on-chip analog circuits, converting analog signals into digital data that is transferred to an external data acquisition (DAQ) system, as illustrated in Fig. 1.1.

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Introduction to CMOS Sensors

  • 章节

  • 发表日期：

    2025年

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  • Ebrahim Ghafar-Zadeh,
  • Saghi Forouhi,
  • Tayebeh Azadmousavi

摘要

CMOS (Complementary Metal-Oxide-Semiconductor) technology is at the forefront of sensor integration, enabling the development of a diverse array of sensors on a single chip. These sensors include capacitive [1–5], impedimetric [6] optical [7], nuclear magnetic resonance (NMR) [8], magnetic hall effect [9], thermal [10], and mechanical [11] types, each designed to detect specific physical changes. CMOS technology facilitates the miniaturization and integration of these sensors, along with their interface circuits, onto a compact and cost-effective platform. This integration allows for the detection of minute electrical changes, which are then processed through on-chip analog circuits, converting analog signals into digital data that is transferred to an external data acquisition (DAQ) system, as illustrated in Fig. 1.1.