The scaling of conventional MOSFETs is increasingly constrained by the 60 mV/dec subthreshold limit, motivating interest in Negative Capacitance Field-Effect Transistors (NCFETs). Ferroelectric materials, such as doped HfO2 and ZrO2, are included into NCFETs to provide internal voltage amplification for low-power operation and steep subthreshold switching. In addition to problems with hysteresis, stability, CMOS compatibility, and variability, this study looks at material engineering techniques, theoretical models, and device mechanics. While current research shows NCFET promise in RF rectification and upcoming computer architectures, comparative analysis reveals benefits over MOSFETs and TFETs. Scalable integration requires ongoing advancements in interface engineering, physics-based compact modeling, and ferroelectric dependability. By allowing lower-power semiconductor technologies for ubiquitous digital and IoT applications, NCFETs provide a possible route toward ultra-efficient nanoelectronics devices and directly contribute to SDG 7: Affordable and Clean Energy.