Imaging technologies are very crucial in today's society, with critical importance in three major domains: security and risk detection, medical diagnosis, and industrial quality control. Imaging techniques enable the visualization, sensing, and detection of signals across the entire electromagnetic spectrum. Starting from early digital radiographs to complex hyperspectral or low-light techniques, the progress in imaging technologies is intrinsically linked to advancements in semiconductor detector architectures. Here, the system performance is largely governed by sensitivity, spatial resolution, and real-time acquisition efficiency. To date, conventional semiconductors have achieved substantial commercial success in this field; however, many roadblocks remain, including complex fabrication processes, higher manufacturing costs, toxicity of precursor materials, and restricted spectral coverage, which are primary limitations. Most recently, lead-free halide perovskites have arisen as a compelling, sustainable option for future semiconducting applications. The optical absorption of these materials can be systematically tuned from the ultraviolet region to the near-infrared through compositional engineering, and the elimination of toxic lead enhances their environmental compatibility. Furthermore, their solution processability, achieved through relatively lower-temperature synthesis methods, simplifies the fabrication process and reduces costs. The panchromatic absorption, superior ambient stability, and miraculous optoelectronic properties establish these materials as promising contenders for high-performance detection and imaging applications. In this chapter, we systematically explain the fundamental principles related to imaging, the mechanism underlying image generation, and the potential and progress of lead-free perovskites in terms of imaging devices, with detection regimes spanning from X-rays to near-infrared wavelengths.