The growing demand for low-power electronics has generated strong interest in memristors and neuromorphic architectures. Perovskite-based memristors are promising due to their flexibility and compatibility with existing semiconductor technologies. Organic–inorganic lead-free perovskites are environmentally friendly while offering low operating voltages, high retention and endurance. Cs₂AgBiBr₆ is the first lead-free halide perovskite memristor showing excellent performance. Similarly, 2D-layered ferroelectric CuInP₂S₆ is scalable and suitable for flexible neuromorphic devices. Antimony-based perovskites (Cs₃Sb₂Br₉) are easy to synthesize exhibiting good ON/OFF ratios. Tin-based halide perovskites are shown to give high mobility. The metal–insulator-metal (MIM) structure is typically fabricated by depositing electrodes in a crossbar geometry using chemical and physical thin-films deposition methods combined with lithography. This chapter discusses the operating principles, materials selection, devices structures, and fabrication methods of perovskite-based memristive devices.