This chapter is devoted to enhancing the reliability of high-speed serial data reception systems, addressing current challenges in the field. Proposed approaches for reducing aging effects in IC receiver circuits meet current demands while improving operational conditions at the cost of increased area and modeling time. A method was developed to reduce aging effects in comparators based on cascode operational amplifiers. By incorporating voltage-regulation transistors, the proposed design improved gain by 6.4% and 11.6% compared to conventional and baseline circuits, respectively. Additionally, offset voltage was reduced by factors of 1.5 and 17.5, with a marginal area increase of 0.28% and 5.1%. A technique to counteract aging in charge pump circuits was introduced. By modifying the load structure, the method eliminated an output voltage drop exceeding 1 V and reduced setup time by a factor of 9, despite a threefold increase in input transistor size. Furthermore, area was reduced by 26.9% through the replacement of metal-oxide-metal capacitors with metal-oxide-semiconductor variants. A negative capacitance circuit was integrated into equalizer designs to mitigate aging-induced threshold voltage shifts caused by hot carrier injection. This approach confined system gain variation to 3.8% and frequency variation to 4.2%, with a 13% area overhead.

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Development of Means for Reliability Improvement in High-Speed Serial Data Receivers

  • Vazgen Melikyan,
  • Kang Li

摘要

This chapter is devoted to enhancing the reliability of high-speed serial data reception systems, addressing current challenges in the field. Proposed approaches for reducing aging effects in IC receiver circuits meet current demands while improving operational conditions at the cost of increased area and modeling time. A method was developed to reduce aging effects in comparators based on cascode operational amplifiers. By incorporating voltage-regulation transistors, the proposed design improved gain by 6.4% and 11.6% compared to conventional and baseline circuits, respectively. Additionally, offset voltage was reduced by factors of 1.5 and 17.5, with a marginal area increase of 0.28% and 5.1%. A technique to counteract aging in charge pump circuits was introduced. By modifying the load structure, the method eliminated an output voltage drop exceeding 1 V and reduced setup time by a factor of 9, despite a threefold increase in input transistor size. Furthermore, area was reduced by 26.9% through the replacement of metal-oxide-metal capacitors with metal-oxide-semiconductor variants. A negative capacitance circuit was integrated into equalizer designs to mitigate aging-induced threshold voltage shifts caused by hot carrier injection. This approach confined system gain variation to 3.8% and frequency variation to 4.2%, with a 13% area overhead.