This chapter is devoted to the solution of the current problems of designing modern integrated circuits by taking into account aging phenomena. Approaches to reduce the effects of aging phenomena in integrated circuits have been proposed, which provide the necessary working conditions with an increase in power consumption, occupied area, and duration of simulations within the permissible limits. A method of compensating the effects of aging phenomena in voltage-controlled generators was developed, as a result of which, due to the circuit controlled by a digital unitary code, it was possible to reduce the 6.5% decrease in the frequency of the output signal to 0.31%, due to the increase of the area by 13.6% and the energy consumption by 15.1%. A method for monitoring and detecting aging phenomena in integrated circuits has been created, which makes it possible to detect aging phenomena by obtaining a digital code at the output of the circuit and using it in compensating circuits. The method was implemented only with metal-oxide-semiconductor transistors, and by not requiring additional input/output pins and testing on the chip, it leads to a reduction in area, testing time, cost of integrated circuits, and increased reliability, occupying only 10 μm2 of surface area and consuming 300 μA current. A method to reduce the effect of aging phenomena in three types of operational amplifiers: two-stage, folded cascode and rail-to-rail, was designed, using only thin gate oxide transistors. In this case, by adding cascode transistors and digital switches, as well as by changing the amplitude of the power down signal, protecting the transistors from stress, it was possible to neutralize amplification factor decrease by 25.8% of the two-stage operational amplifier, 22.3% of the folded cascode operational amplifier and 23.3% of the rail-to-rail operational amplifier, with the increase up to 3.2%, 4.8%, and 7.1% in area, respectively. A method of increasing design accuracy of the aging-aware standard cell libraries was proposed, in which case, by taking into account the possible phase shifts between the input signals of the cells, it is possible to obtain an increase in design accuracy of up to 24.5% at the expense of increasing the simulation time by 2–3 times.