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This research investigates the use of TCAD simulations to enhance NMOS transistors, which are used in every modern electronic system. We investigate how changes in channel doping levels impact device performance to improve the drain and transfer characteristics. The best configurations can be found by mathematical methodology to modify these parameters for improving the efficiency and dependability of the NMOS transistor. The results show the capabilities of Silvaco’s TCAD in semiconductor device analysis and provide helpful insights into optimizing device performance for a wide range of electronic applications. The NMOS transistor is virtually fabricated using ATHENA software, while electrical properties are simulated and assessed using ATLAS software.

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Optimizing 180 Nm NMOS Performance: A TCAD-Driven Framework for Enhanced Circuit Design

  • 会议论文

  • 发表日期：

    2026年

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  • Divesh Kumar,
  • Nikunj Agrawal,
  • Ajit Debnath,
  • Manish Kumar,
  • Dheeraj Kalra,
  • Jyoti Ramola

摘要

This research investigates the use of TCAD simulations to enhance NMOS transistors, which are used in every modern electronic system. We investigate how changes in channel doping levels impact device performance to improve the drain and transfer characteristics. The best configurations can be found by mathematical methodology to modify these parameters for improving the efficiency and dependability of the NMOS transistor. The results show the capabilities of Silvaco’s TCAD in semiconductor device analysis and provide helpful insights into optimizing device performance for a wide range of electronic applications. The NMOS transistor is virtually fabricated using ATHENA software, while electrical properties are simulated and assessed using ATLAS software.