We present a tutorial to support first-year Master’s students in Electronic Engineering in their study of power electronic devices. The tutorial provides a structured and application-oriented approach to modeling the IRF740 power MOSFET using MATLAB/Simulink. The work focuses on the development of both static and dynamic behavioral models. The static model highlights the relationships between the gate-source and drain-source voltages (VGS, VDS) and the drain current (IDS), guiding students in understanding the MOSFET’s operating regions. The dynamic model extends this by incorporating parasitic capacitances, enabling the analysis of switching behavior and current waveform deformation due to capacitive delays. A key innovation is the integration of a thermal model based on an RC network that estimates the junction temperature from power dissipation and thermal resistance. The effects of temperature on critical parameters such as RDSon and VTH are modeled to show how thermal dynamics impact electrical behavior, system stability, and performance. Safety mechanisms, like thermal shutdown, are included as well. This educational resource aims at bridging theoretical concepts and simulation-based design and at supporting development of modeling skills. Its modular design and open-source availability makes it suited to further research and teaching applications, including advanced modeling of SiC/GaN devices and thermal management strategies.