Energy poses a fundamental challenge for the future, and power generation from renewable sources has become a global priority. Among these, solar energy stands out for its immense potential, although current photovoltaic cells are limited by relatively low efficiencies. To overcome this limitation, research efforts are increasingly focused on the use of materials with a broad spectral coverage, such as nitrides. Indium gallium nitride (InxGa1−xN) alloy is particularly promising for photovoltaic applications due to its tunable bandgap, which enables it to absorb light over a wide range of the solar spectrum. In this study, we explore a novel approach to enhance the performance of a single-junction InGaN-based cell by integrating a multi-dielectric resonant structure under static, multi-spectral illumination. Key parameters such as minority carrier lifetime, recombination velocity, diffusion length, and the doping and thickness of the emitter and base layers are crucial for optimizing solar cell performance. This study, therefore, considers the simultaneous influence of both emitter and base doping on device characteristics. This results in enhanced solar cell performance, leading to an increase in open-circuit voltage (Voc) from 0,94 to 0,95 V, an increase in short-circuit current density (Jsc) from 32,68 to 43 mA/cm2, and a rise in efficiency from 26,50 to 33,09% compared to the reference cell [1].