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Radiation-hard detectors with bulk p-Fz (Float Zone) or n, and p-type Magnetic Czochralski (MCz) Si are required for the pCT system’s Si tracker. The search for a material for the baseline detector is a challenging task. Within CERN RD 50 collaborations, several material and design studies have been done to investigate the performance of the materials. On the basis of the studies, we have chosen the p-Fz design and n-MCz Si material for the comparative performance study of the detectors. Here, the proton radiation damage model for n-MCz Si is developed for the extrapolation of the detector results on the VFD, IL, and CCE in the n-MCz Si microstrip detector up to the fluence of 9.62 × 1014 neq./ cm2. Finally, a radiation-hard n-MCz Si microstrip detector design is proposed as a first option for the Si Tracker of the new and fast pCT system.

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Investigation of Proton Radiation Damage Effects in p-Fz/n-MCz Thin Si Microstrip Detector for Si Tracker of Proton Computed Tomography System

  • 会议论文

  • 发表日期：

    2026年

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  • Jaspreet Kaur,
  • Puspita Chatterjee,
  • Nitu Saini,
  • Deepali,
  • Vinod Kumar,
  • Ajay K. Srivastava

摘要

Radiation-hard detectors with bulk p-Fz (Float Zone) or n, and p-type Magnetic Czochralski (MCz) Si are required for the pCT system’s Si tracker. The search for a material for the baseline detector is a challenging task. Within CERN RD 50 collaborations, several material and design studies have been done to investigate the performance of the materials. On the basis of the studies, we have chosen the p-Fz design and n-MCz Si material for the comparative performance study of the detectors. Here, the proton radiation damage model for n-MCz Si is developed for the extrapolation of the detector results on the VFD, IL, and CCE in the n-MCz Si microstrip detector up to the fluence of 9.62 × 1014 neq./ cm2. Finally, a radiation-hard n-MCz Si microstrip detector design is proposed as a first option for the Si Tracker of the new and fast pCT system.