Temperature-Dependent Dielectric Properties of Undoped and Doped 8CB
摘要
The primary aim of this present study is to examine the temperature-dependent variations in the dielectric characteristics of LC 4ʹ-octyl-4-biphenylcarbonitrile (widely recognized as 8CB). Our findings reveal that the value of \(\varepsilon^{\prime}\) depends on concentration and diffusion coefficient of mobile ions present in the doped and undoped 8CB. Additionally, we observe that in the plots of \(\varepsilon^{\prime\prime}\) and \(\tan \delta\) as a function of frequency, the relaxation peaks shift towards higher side in the doped system. The voltage-dependent behavior of these samples was also examined.