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We report the synthesisSynthesis, structural, and dielectric characterizationCharacterization of three ceramicCeramic compounds, ITZOITZO-III, ITZOITZO-V, and ITZOITZO-VII, prepared via the solid-state reaction method. These compounds crystallize in the rhombohedral space group, R-3m, and are isostructural with the homologous InGaO3(ZnOZinc Oxide (ZnO))m (IGZO) series with m = odd number. The synthesisSynthesis was carried out at 1200 °C in air. Structural characterizationCharacterization by X-ray diffraction (XRDX-Ray Diffraction (XRD)) confirmed the formation of a single phase for each compound. Scanning electron microscopy (SEMScanning Electron Microscopy (SEM)) revealed microstructuresMicrostructure composed of irregular shaped grains, with grain sizeGrain size slightly dependent on the composition. Dielectric characterizationCharacterization at room temperatureTemperature (RT) in the frequency range of 20 Hz to 1 MHz showed that ITZOITZO-III has the highest dielectric constant (~ 117 at 100 kHz) and a reasonably low dielectric loss (~ 0.15), while ITZOITZO-V and ITZOITZO-VII presented moderate dielectric propertiesDielectric properties. These results suggest ITZOITZO-type ceramicsCeramic are promising dielectric candidates for multilayer ceramicCeramic capacitorsCapacitor and related electronic applications.

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Layered Ceramics in the In–Ti–Zn–O System: Synthesis and Dielectric Properties of In1+x(Ti1/2Zn1/2)1−xO3(ZnO)m (M = 3, 5, 7; X = 0.5)

  • 会议论文

  • 发表日期：

    2026年

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  • Victor Emmanuel Alvarez-Montano,
  • Subhash Sharma,
  • Francisco Brown,
  • Javier Hernández-Paredes,
  • Ofelia Hernández-Negrete,
  • Guillermo Tiburcio-Munive,
  • Alejandro Durán

摘要

We report the synthesisSynthesis, structural, and dielectric characterizationCharacterization of three ceramicCeramic compounds, ITZOITZO-III, ITZOITZO-V, and ITZOITZO-VII, prepared via the solid-state reaction method. These compounds crystallize in the rhombohedral space group, R-3m, and are isostructural with the homologous InGaO3(ZnOZinc Oxide (ZnO))m (IGZO) series with m = odd number. The synthesisSynthesis was carried out at 1200 °C in air. Structural characterizationCharacterization by X-ray diffraction (XRDX-Ray Diffraction (XRD)) confirmed the formation of a single phase for each compound. Scanning electron microscopy (SEMScanning Electron Microscopy (SEM)) revealed microstructuresMicrostructure composed of irregular shaped grains, with grain sizeGrain size slightly dependent on the composition. Dielectric characterizationCharacterization at room temperatureTemperature (RT) in the frequency range of 20 Hz to 1 MHz showed that ITZOITZO-III has the highest dielectric constant (~ 117 at 100 kHz) and a reasonably low dielectric loss (~ 0.15), while ITZOITZO-V and ITZOITZO-VII presented moderate dielectric propertiesDielectric properties. These results suggest ITZOITZO-type ceramicsCeramic are promising dielectric candidates for multilayer ceramicCeramic capacitorsCapacitor and related electronic applications.