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First, a simple microscopic scenario of ion implantation process is presented. This includes a discussion of primary defect formation from the crystalline state up to the amorphous state. Beam annealing and hot implantation are discussed as part of the annealing strategies with an emphasis on understanding the effect of the annealing sequence on the defect reduction process. Understanding of the defect formation and annealing is used to better understand defects that commonly arise during device processing. Briefly, extreme low energy and molecular ions are dealt with.

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Radiation Damage of Silicon

  • 章节

  • 发表日期：

    2026年

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  • Kevin S. Jones,
  • Lucia Romano,
  • Nicholas G. Rudawski,
  • Jozsef Gyulai,
  • Peter Petrik

摘要

First, a simple microscopic scenario of ion implantation process is presented. This includes a discussion of primary defect formation from the crystalline state up to the amorphous state. Beam annealing and hot implantation are discussed as part of the annealing strategies with an emphasis on understanding the effect of the annealing sequence on the defect reduction process. Understanding of the defect formation and annealing is used to better understand defects that commonly arise during device processing. Briefly, extreme low energy and molecular ions are dealt with.