Ion implantation processing of electronic materials and devices uses a wide variety of accelerator systems and end station designs as well as many special techniques. After a concise outline of the basics of accelerator components (ions sources, ion acceleration, beam and wafer scanning), examples of commercial ion implantation systems for medium and high current, high energy, plasma immersion as well as special tools for doping of large-area flat-panels and photo-voltaic cells are described in a tutorial fashion for their component layout, accelerator, beam/wafer scanning mechanisms and performance characteristics in terms of ion energy range and beam current and special capabilities.